Method for removal of residue from a magneto-resistive...

Details Method for removal of residue from a magneto-resistive... Method for removal of residue from a magneto-resistive...

2006-01-10

2006-01-10

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S754000

Reexamination Certificate

active

06984585

ABSTRACT:
A method for removal of residues after plasma etching a film stack comprising a first layer and a sacrificial layer. The method treats a substrate containing the film stack after the first layer of the film stack has been etched to remove residue produced during the etching process. The treatment is performed in a buffered oxide etch wet dip solution that removes the residue and the sacrificial layer.

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