Method for removal of photoresist residue after dry metal etch

Details Method for removal of photoresist residue after dry metal etch Method for removal of photoresist residue after dry metal etch

1996-09-09

1998-06-23

Jones, Deborah

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438906, 438963, 134 12, C25F 330

Patent

active

057705232

ABSTRACT:
A method is provided for the removal of the surface layer of the residual photoresist mask pattern used for metal subtractive etching which uses the same reactor equipment but employs reactive fluorine-containing gases to form volatile compounds with the surface layer, so that subsequently a conventional oxygen plasma stripping process can be used for complete resist residue removal without requiring excessive temperature exposure of the integrated circuit devices.

REFERENCES:
patent: 4501061 (1985-02-01), Wonnacott
patent: 4975146 (1990-12-01), Knapp et al.
patent: 5202291 (1993-04-01), Charvat et al.
patent: 5320707 (1994-06-01), Kanekiyo et al.
patent: 5320709 (1994-06-01), Bowden et al.
patent: 5356478 (1994-10-01), Chen et al.
patent: 5411631 (1995-05-01), Hori et al.

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