Method for removal of minute physical damage to silicon wafers b

Details Method for removal of minute physical damage to silicon wafers b Method for removal of minute physical damage to silicon wafers b

1980-09-16

1983-06-28

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156645, 156662, 219121LF, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

043903924

ABSTRACT:
In order to produce wafers suitable for fabrication of integrated circuits, an ingot of raw silicon must undergo a process which includes several steps. The ingot must be sawed into slices, the slices edge ground to remove roughness of the edges, lapped to remove as much saw damage as possible, stress relief etched to remove as small a damaged area as possible, then polished. Each of these steps requires removal of some of the material of the slice. The use of laser annealing reduces the amount of surface removed, as it repairs some surface damage, smoothes the surface, and when accomplished in a partial vacuum, improves the chemical composition of the material as related to electrical activity.

REFERENCES:
patent: 4249960 (1981-02-01), Schnable et al.
patent: 4257827 (1981-03-01), Schwuttke et al.
patent: 4258078 (1981-03-01), Celler et al.
patent: 4276114 (1981-06-01), Takano et al.

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