Method for removal of metallic residue after plasma etching...

Details Method for removal of metallic residue after plasma etching... Method for removal of metallic residue after plasma etching...

2008-01-22

2008-01-22

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S906000, C438S003000

Reexamination Certificate

active

07320942

ABSTRACT:
A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.

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