Method for releasing stress during semiconductor device...

Details Method for releasing stress during semiconductor device... Method for releasing stress during semiconductor device...

2006-06-27

2006-06-27

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S595000

Reexamination Certificate

active

07067408

ABSTRACT:
A semiconductor device and a method for releasing stress exerted while fabricating the semiconductor device. The method for releasing the stress, includes forming a stack layer deposited on a semiconductor sequentially with a gate oxide layer, a poly-silicon layer, a tungsten layer, and a hard mask; selectively oxidizing, wherein only the poly-silicon layer of the stack layer is oxidized; heat treating for releasing stress exerted during the selective oxidation process; and forming a gate sealing nitride layer on the stack layer heat-treated.

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