Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2007-11-13
2007-11-13
Hassanzadeh, Parviz (Department: 1763)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S099000, C216S024000
Reexamination Certificate
active
11081645
ABSTRACT:
A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.
REFERENCES:
patent: 5262000 (1993-11-01), Welbourn et al.
patent: 5387269 (1995-02-01), Nijander et al.
patent: 5911835 (1999-06-01), Lee et al.
patent: 6290861 (2001-09-01), Patel et al.
patent: 6356378 (2002-03-01), Huibers
patent: 6396619 (2002-05-01), Huibers et al.
patent: 6423646 (2002-07-01), Yen et al.
patent: 2002/0197761 (2002-12-01), Patel et al.
patent: 19624316 (1998-01-01), None
patent: 11031684 (1999-02-01), None
Chen Fei-Yun
Chen Shih-Shiung
Wu Tzu-Yang
Birch & Stewart Kolasch & Birch, LLP
Culbert Roberts
Hassanzadeh Parviz
Taiwan Semiconductor Manufacturing Co. Ltd.
LandOfFree
Method for releasing a micromechanical structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for releasing a micromechanical structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for releasing a micromechanical structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3888102