Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-11-14
2008-10-28
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S063000, C365S230020
Reexamination Certificate
active
07443744
ABSTRACT:
A method and enhanced Static Random Access Memory (SRAM) redundancy circuit reduce wiring and the required number of redundant elements. A bitline redundancy mechanism allows the swapping of a pair of bitlines for a redundant pair of bit columns. Two of the adjacent bitlines are swapped out at a time, one even and one odd. The swap is accomplished by steering the data around the bad columns and adding redundant columns on the end that are steered in when needed.
REFERENCES:
patent: 6571348 (2003-05-01), Tsai et al.
patent: 6885596 (2005-04-01), Asano et al.
Behrends Derick Gardner
Freiburger Peter Thomas
Kivimagi Ryan Charles
Nelson Daniel Mark
Dinh Son
International Business Machines - Corporation
Pennington Joan
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