Method for reducing wafer arcing

Details Method for reducing wafer arcing Method for reducing wafer arcing

2006-04-11

2006-04-11

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

With measuring or testing

C438S706000, C438S707000, C438S710000, C438S712000, C361S234000

Reexamination Certificate

active

07026174

ABSTRACT:
A method for reducing wafer damage during an etching process is provided. In one of the many embodiments, the method includes assigning a bias voltage to each of at least one etching process, and generating the assigned bias voltage before initiation of one of the at least one etching process. The method further includes applying the assigned bias voltage to an electrostatic chuck before initiation of one of the at least one etching processes. The assigned bias voltage level reduces wafer arcing.

REFERENCES:
patent: 5272417 (1993-12-01), Ohmi
patent: 5737175 (1998-04-01), Grosshart et al.
patent: 5793192 (1998-08-01), Kubly et al.
patent: 5835335 (1998-11-01), Ross et al.
patent: 5894400 (1999-04-01), Graven et al.
patent: 6242360 (2001-06-01), Fischer et al.
patent: 6256186 (2001-07-01), Powell et al.
patent: 6346428 (2002-02-01), Athavale et al.
patent: 6361645 (2002-03-01), Schoepp et al.
patent: 2002/0017694 (2002-02-01), Yamaguchi
Andreas Fischer et al., “Wafer Arcing Phenomena and Resolution Trough a Capacitively Coupled Low-Gap Plasma Reactor”, 2002 7thInternational Symposium on Plasma—and Process-Induced Damage.
International Search Report—PCT/US 03/30605 filed Sep. 24, 2003.

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