Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-28
2006-11-28
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S677000, C438S680000, C438S685000, C438S902000
Reexamination Certificate
active
07141494
ABSTRACT:
A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
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Ashtiani Kaihan A.
Chan Lana Hiului
Collins Joshua
Fellis Aaron R.
Gao Juwen
Beyer Weaver & Thomas LLP.
Lebentritt Michael
Lee Cheung
Novellus Systems Inc.
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