Method for reducing the trap density in a semiconductor wafer

Details Method for reducing the trap density in a semiconductor wafer Method for reducing the trap density in a semiconductor wafer

2006-09-28

2009-10-13

Rose, Kiesha L (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S423000

Reexamination Certificate

active

07601606

ABSTRACT:
The invention provides methods for reducing trap densities at interfaces in a multilayer semiconductor wafer, specifically trap densities between an active layer and an insulating layer under the active layer. The methods comprise exposing wafers to high temperatures in a generally neutral atmosphere that also comprises one or more species that can, or whose ions can, migrate into the wafer down to the interface where reduction of the trap density is desired.

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