Method for reducing the reflectivity of a silicide layer

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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Details

427 99, 427255, 4272557, 4273766, 438592, B05D 512, B05D 302, C23C 1642

Patent

active

059086599

ABSTRACT:
The present invention discloses a method for reducing the reflectivity of a silicide layer. This invention utilizes a rapid thermal oxidation process to treat a tungsten silicide film in order to reduce the reflectivity of the tungsten silicide film. Thus, an anti-reflectivity layer is not required in the present invention. In addition simplify the present invention, a thin oxide layer is growth on the tungsten suicide layer during the rapid thermal oxidation process and the thin oxide layer serves as a hard mask in subsequent steps. In addition, because utilizing the rapid thermal process, the present invention can greatly reduce the resistance of the tungsten silicide in order to increase the speed of the devices.

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