Method for reducing the contact resistance of the connection...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S199000, C438S685000

Reexamination Certificate

active

10966141

ABSTRACT:
One embodiment of the invention relates to a method for fabricating a semiconductor device having a semiconductor structure with a silicon region which forms at least one connection region in and/or on a surface of a substrate. The method comprises forming a metal cluster layer from a first, non-siliciding metal, followed by the deposition of a metal layer consisting of a second, siliciding metal. A subsequent heat treatment is responsible for forming a metal silicide from the second metal, the atoms of the first metal being displaced in a direction substantially perpendicular to the surface of the substrate. According to one embodiment of the invention, the atoms of the first metal are displaced by the Kirkendall effect to beneath the metal silicide. If an MOST, for example, is being fabricated, this has advantages both at the location of the source and drain region and at the location of the gate electrode.

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Journal of Materials Research, vol. 12, Nos. 1-12 (1997).
Maszara et al., “Transistors with Dual Work Function Metal Gates by Single Full Silicidation (FUSI) of Polysilicon Gates”, (2002) IEEE pp. 367-370.

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