Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2006-03-13
2010-06-22
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S724000, C257S797000, C257SE21599, C257SE21596, C257SE21238, C438S460000, C438S462000, C451S006000, C451S008000, C451S057000
Reexamination Certificate
active
07741701
ABSTRACT:
A method for treating an area of a semiconductor wafer surface with a laser for reducing stress concentrations is disclosed. The wafer treatment method discloses treating an area of a wafer surface with a laser beam, wherein the treated area is ablated or melted by the beam and re-solidifies into a more planar profile, thereby reducing areas of stress concentration and stress risers that contribute to cracking and chipping during wafer singulation. Preferably, the treated area has a width less than that of a scribe street, but wider than the kerf created by a wafer dicing blade. Consequently, when the wafer is singulated, the dicing blade will preferably saw through treated areas only. It will be understood that the method of the preferred embodiments may be used to treat other areas of stress concentration and surface discontinuities on the wafer, as desired.
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Mahle Richard L.
Sakakini Peter J.
Brady III Wade J.
Lee Hsien-ming
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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