Method for reducing particles during ion implantation

Details Method for reducing particles during ion implantation Method for reducing particles during ion implantation

2007-04-03

2007-04-03

Vanore, David A. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S397000, C250S492100, C250S492200, C250S492230, C250S492300

Reexamination Certificate

active

11161995

ABSTRACT:
A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An ion beam selected from the mass analyzer is blocked by the Faraday flag in a closed position between the mass analyzer and the semiconductor wafer. A beam current of the ion beam impinging on the beam striking zone of the beam plate is measured. After the beam current measurement, the Faraday flag is removed such that the ion beam impinges on the semiconductor wafer.

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patent: 5656092 (1997-08-01), Blake et al.
patent: 5670217 (1997-09-01), Blake et al.
patent: 5998798 (1999-12-01), Halling et al.
patent: 6221169 (2001-04-01), Bernstein et al.
patent: 6720563 (2004-04-01), Kabasawa

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