Method for reducing parasitic capacitance in integrated circuit

Details Method for reducing parasitic capacitance in integrated circuit Method for reducing parasitic capacitance in integrated circuit

1978-12-26

1980-09-16

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29571, 29578, 29580, 148187, 148188, 156656, 156657, 156662, 156668, 1566591, 430313, H01L 21225, H01L 21308

Patent

active

042228166

ABSTRACT:
A method for reducing parasitic capacitance in semiconductor devices, particularly for the removal of raised portions of conductive layers overlying and capable of being capacitively coupled to other conductors in semiconductor memory integrated circuits. The method provides for the application of a masking or photoresist layer over the surface of a substrate containing portions of a conductor to be removed such that the masking layer completely covers the conductor. Next a uniform thickness of the masking layer is removed to expose only the raised portions of the conductor which are subsequently selectively etched through the remainder of the masking layer. Application of the method to a manufacturing process for a dynamic MOSFET memory array is also described in which bit sense line capacitance is substantially reduced.

REFERENCES:
patent: 3841926 (1974-10-01), Garnache et al.
patent: 3975220 (1976-08-01), Quinn et al.
patent: 3976524 (1976-08-01), Feng
patent: 4025411 (1977-05-01), Hom-Ma
patent: 4045594 (1977-08-01), Maddocks
patent: 4070501 (1978-01-01), Corbin et al.
Kruggel et al., "Low Capacitance Semiconductor . . . Profile," IBM Technical Disclosure Bulletin, vol. 17, No. 1, (6/74), p. 18.
Spencer, "Smoothing . . . Surfaces," IBM Technical Disclosure Bulletin, vol. 20, No. 11B, (4/78), 4842-4843.
Garnache, "Insulated Gate . . . Structure," IBM Technical Disclosure Bulletin, vol. 17, No. 1, (6/74), p. 17.
Garnache, "Method . . . Lines," IBM Technical Disclosure Bulletin, vol. 19, No. 7, (12/76), 2471-2472.

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