Method for reducing oxidation of electroplating chamber contacts

Details Method for reducing oxidation of electroplating chamber contacts Method for reducing oxidation of electroplating chamber contacts

1997-10-16

1999-03-16

Gorgos, Kathryn

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Depositing predominantly single metal coating

205269, 205271, 205291, 205238, 205252, 205184, 205191, 205123, 205157, 205170, 205181, 205182, 438466, 438597, C25D 300, C25D 356, C25D 712, C23C 2802

Patent

active

058824987

ABSTRACT:
A method for electroplating a silicon substrate in manufacturing a semiconductive device is provided. Electroplating process chamber contacts or fingers used in positioning a silicon substrate or wafer during an electroplating process are plated with a metal layer to prevent oxidation of the contacts. Oxidation of the contacts may result in increased and varying resistance of the contacts and thus nonuniform plating of the silicon wafer and possibly even deplating of a seed layer. A 20 mA/cm.sup.2 current is applied to the contacts which are immersed in an electrolyte solution before loading a silicon wafer. A silicon wafer is then loaded into the electroplating process chamber containing the electrolyte solution. The preplating of the contacts enables the formation of a uniform metal layer on the silicon substrate. Additionally, voltage then may be applied to the contacts after unloading the silicon wafer to reduce oxidation. This electroplating method reduces expensive maintenance time in replacing or cleaning electroplating chamber contacts. The method also does not require expensive and complex electronics to monitor and supply current to the contacts.

REFERENCES:
patent: 5429733 (1995-07-01), Ishida
patent: 5472592 (1995-12-01), Lowery
Semitool.RTM., entitled EQUINOX Single Substrate Processing System, EQU 025 1.11-4.11, 6.11 no date available.

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