Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base
Patent
1994-11-30
1997-10-21
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With pretreatment or preparation of a base
117 54, 117109, 117951, 457100, C30B 2936
Patent
active
056791534
ABSTRACT:
A method is disclosed for producing epitaxial layers of silicon carbide that are substantially free of micropipe defects. The method comprises growing an epitaxial layer of silicon carbide on a silicon carbide substrate by liquid phase epitaxy from a melt of silicon carbide in silicon and an element that enhances the solubility of silicon carbide in the melt. The atomic percentage of that element predominates over the atomic percentage of silicon in the melt. Micropipe defects propagated by the substrate into the epitaxial layer are closed by continuing to grow the epitaxial layer under the proper conditions until the epitaxial layer has a thickness at which micropipe defects present in the substrate are substantially no longer reproduced in the epitaxial layer, and the number of micropipe defects in the epitaxial layer is substantially reduced.
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Carter, Jr. Calvin H.
Dmitriev Vladimir A.
Ivantsov Vladimir A.
Rendakova Svetlana V.
Cree Research Inc.
Kunemund Robert
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