Method for reducing gate oxide damages during gate electrode pla

Details Method for reducing gate oxide damages during gate electrode pla Method for reducing gate oxide damages during gate electrode pla

1996-08-16

1998-06-02

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438710, 438719, 216 67, H01L 2100

Patent

active

057599190

ABSTRACT:
A method of forming a gate on a silicon substrate with a preformed film of gate oxide. A polysilicon layer is formed on the gate oxide. A slit is then formed in a predetermined area of the polysilicon layer. A masking layer is formed on the surface of the polysilicon layer surrounded by the slit. Exposed polysilicon is then removed, and the masking layer is removed.

REFERENCES:
patent: 4472237 (1984-09-01), Deslauriers et al.
patent: 5030590 (1991-07-01), Amini et al.
patent: 5366913 (1994-11-01), Nakao
patent: 5368684 (1994-11-01), Ishikawa et al.
patent: 5603848 (1997-02-01), Beratan et al.

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