Method for reducing dendrite formation in nickel silicon...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S664000

Reexamination Certificate

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11460671

ABSTRACT:
A method for reducing dendrite formation in a self-aligned, silicide process for a semiconductor device includes forming a silicide metal layer over a semiconductor substrate, the semiconductor device having one or more diffusion regions, one or more isolation areas and one or more gate structures formed thereon. The concentration of metal rich portions of the metal layer is reduced through the introduction of silicon thereto, and the semiconductor device is annealed.

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