Method for reducing dendrite formation in nickel silicon...

Details Method for reducing dendrite formation in nickel silicon... Method for reducing dendrite formation in nickel silicon...

2008-01-22

2008-01-22

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S664000

Reexamination Certificate

active

11460671

ABSTRACT:
A method for reducing dendrite formation in a self-aligned, silicide process for a semiconductor device includes forming a silicide metal layer over a semiconductor substrate, the semiconductor device having one or more diffusion regions, one or more isolation areas and one or more gate structures formed thereon. The concentration of metal rich portions of the metal layer is reduced through the introduction of silicon thereto, and the semiconductor device is annealed.

REFERENCES:
patent: 5464520 (1995-11-01), Kano et al.
patent: 5618397 (1997-04-01), Kano et al.
patent: 6323130 (2001-11-01), Brodsky et al.
patent: 6780694 (2004-08-01), Doris et al.
patent: 6787425 (2004-09-01), Rotondaro et al.
patent: 6809018 (2004-10-01), Chung
patent: 2002/0111021 (2002-08-01), Paton et al.
patent: 2004/0061191 (2004-04-01), Paton et al.
patent: 2005/0272262 (2005-12-01), Kim
patent: 2006/0003534 (2006-01-01), Roh et al.
patent: 8067972 (1996-03-01), None

Affiliated with

Also associated with

Rating

Method for reducing dendrite formation in nickel silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reducing dendrite formation in nickel silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing dendrite formation in nickel silicon... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3930450