Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-17
2007-04-17
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S711000
Reexamination Certificate
active
10736395
ABSTRACT:
A semiconductor process exposes metal in anticipation of an additional processing step that includes a deposition of a layer. Between the two processing steps, the exposed metal is exposed to ambient conditions that may include humidity. The effect of the humidity is potentially to cause corrosion of the exposed metal causing a yield loss. In order to withstand the various time periods that may occur between processing steps, an inhibitor is applied to the exposed surface causing the formation of a very thin protective layer on the exposed metal, which greatly inhibits corrosion. This thin protective layer does not cause any problems with the subsequent step because the typical following steps all, by their very nature, remove the protective layer. Thus, the time period between the processing step that exposes the metal and the next step is no longer critical due to the protective layer.
REFERENCES:
patent: 4973448 (1990-11-01), Carlson
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6344432 (2002-02-01), Wojtczak
patent: 6350687 (2002-02-01), Avanzino et al.
patent: 6383928 (2002-05-01), Eissa
patent: 6482750 (2002-11-01), Yokoi
patent: 6524376 (2003-02-01), Aoki
patent: 6524957 (2003-02-01), Merchant et al.
patent: 6752844 (2004-06-01), Miller et al.
patent: 6784105 (2004-08-01), Yang et al.
patent: 2001/0011515 (2001-08-01), Aoki
patent: 2001/0050350 (2001-12-01), Wojtczak
patent: 2002/0065204 (2002-05-01), Wojtczak
patent: 2002/0132744 (2002-09-01), Wojtczak
patent: 2002/0189643 (2002-12-01), Chen
patent: 2003/0068853 (2003-04-01), Conti
patent: 2003/0078173 (2003-04-01), Wojtczak
patent: 2003/0083214 (2003-05-01), Kakizawa
patent: 2003/0087534 (2003-05-01), Mallikarjunan
patent: 2003/0114000 (2003-06-01), Noguchi
patent: 2003/0203624 (2003-10-01), Sameshima et al.
patent: WO 00/02238 (2000-01-01), None
Bolton Scott C.
Haygood Barry T.
McEwan Grant W.
Balconi-Lamica Michael
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Nguyen Thanh
LandOfFree
Method for reducing corrosion of metal surfaces during... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for reducing corrosion of metal surfaces during..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing corrosion of metal surfaces during... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3737140