Method for reducing carbon monoxide poisoning in a thin film...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S584000, C257SE21170, C427S537000

Reexamination Certificate

active

07858522

ABSTRACT:
A method for introducing a precursor vapor to a process chamber configured for forming a thin film on a substrate is described. The method includes transporting a process gas containing metal precursor vapor and a CO delivery gas to a process chamber, and introducing a CO saturation gas to the precursor vapor in the process chamber and optionally adjusting the spatial distribution of the CO saturation gas addition in order to affect improvements to the properties of the deposited film.

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C. Czekaj et al., Chemical Vapor Deposition of FeCox and FeCoxOy, Thin Films from Fe-Co Carbonyl Clusters, Inorg. Chem. 1988, 27, pp. 8-10.

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