Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Utilizing reflow
Reexamination Certificate
2007-11-20
2007-11-20
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Utilizing reflow
C438S597000, C438S623000, C438S624000, C438S687000, C438S688000, C438S695000, C438S710000, C438S760000, C438S763000, C438S784000, C257SE21279
Reexamination Certificate
active
11034952
ABSTRACT:
A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used for generating the high density plasma. The first step deposition uses high argon concentration and low sputter etch-to-deposition (E/D) ratio. High E/D ratio maintains the gap openings without necking. In the second step, a lower argon concentration and lower E/D ratio are used. Since observed metal defects are caused by argon diffusion in the top 200-300 nm of the HDP-CVD film, by controlling argon concentration in the top part of the film (i.e. second step deposition) to a low value, a reduced number of metal defects are achieved.
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Lok Weoi San
Xie Jun
Yap Hoon Lian
Yeap Chuin Boon
Chartered Semiconductor Manufacturing Ltd.
Lebentritt Michael
Lee Kyoung
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