Method for reducing antenna effect during plasma etching procedu

Details Method for reducing antenna effect during plasma etching procedu Method for reducing antenna effect during plasma etching procedu

1996-05-13

1999-06-08

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438694, H01L 2100

Patent

active

059104520

ABSTRACT:
A method of semiconductor fabrication that reduces an antenna effect that can occur during a plasma etching procedure. The semiconductor device has circuitry fabricated over the surface of a silicon substrate and includes a gate structure having a gate oxide layer beneath a conductor layer. The method includes etching a polysilicon layer formed over the surface of the circuitry. The method also includes forming trenches in the polysilicon layer at the roots of sidewalls of gate structures of the semiconductor device, at an early stage of plasma etching, before the polysilicon layer has been completely consumed. The plasma may include a gas mixture of chlorine and oxygen. The gas mixture may have a chlorine/oxygen flow ratio of about 100/5 sccm.

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Fang, Murukawa, and McVittie, "A New Model for Thin Oxide Degradation from Wafer Charging in Plasma Etching", Tech. Dig. IEDM, 1992, pp. 61-64.

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