Method for realizing microchannels in an integrated structure

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S002000, C216S017000, C216S018000, C216S057000, C216S083000, C438S689000, C438S733000, C438S734000

Reexamination Certificate

active

07063798

ABSTRACT:
A process is presented for realizing buried microchannels (10) in an integrated structure (1) comprising a monocrystalline silicon substrate (2). The process forms in the substrate (2) at least one trench (4). A microchannel (10) is obtained starting from a small surface port of the trench (4) by anisotropic etching of the trench. The microchannel (10) is then completely buried in the substrate (2) by growing a microcrystalline structure to enclose the small surface port.

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European Search Report, 02425746.1, dated Jul. 15, 2003.

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