Method for real time metal ETCH critical dimension control

Details Method for real time metal ETCH critical dimension control Method for real time metal ETCH critical dimension control

2005-09-06

2005-09-06

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S084000, C702S097000, C702S170000

Reexamination Certificate

active

06939476

ABSTRACT:
The present invention predicts Critical Dimension (CD) before processing a wafer lot and alters the etch by adjusting recipe inputs to control the current lots bias to target critical dimensions. Also, the process incorporates the use of etch chamber selection by an automated system, disallowing processing of a lot if critical dimensions are predicted to be out of control. Line caper, the angle of sidewall on the metal line, and oxide loss, the amount of oxide removed by the over etch portion of the process, are also used to monitor current tool performance and make adjustments to recipe inputs.

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