Method for reading out or in a status from or to a...

Details Method for reading out or in a status from or to a... Method for reading out or in a status from or to a...

2005-09-13

2005-09-13

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000

Reexamination Certificate

active

06944044

ABSTRACT:
The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.

REFERENCES:
patent: 5515311 (1996-05-01), Mihara
patent: 5959879 (1999-09-01), Koo
patent: 6067244 (2000-05-01), Ma et al.
patent: 6515889 (2003-02-01), Salling et al.
T. Nakamura, et al. A Single-Transistor Ferroelectric Memory Cell, IEEE International Solid-State Circuits Conference, ISSCC95, Session 4, Technology Directions: Displays, Photonics and Ferroelectric Memoris, pp. 68-69, 1995.
Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) for Single Transistor Memory by Using Poly-Si Source/Drain and BaMgF4 Dielectric, IEDM 1996, pp. 5503-5506, 1998.

Affiliated with

Also associated with

Rating

Method for reading out or in a status from or to a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reading out or in a status from or to a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reading out or in a status from or to a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3422897