Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-01-03
2006-01-03
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S220000, C365S189110, C365S230060, C365S233100
Reexamination Certificate
active
06982895
ABSTRACT:
A passive matrix-addressable device may include individually addressable cells of a polarizable material. The cells store data in one of two polarization states in each cell, and the polarization states in the cells are written and read by addressing via electrodes which form word and bit lines. The cells are provided in or at the crossings between the word and bit lines and a voltage pulse protocol is used read and write data to cells. During reading, a word line is activated by applying voltage which relative to the potential on all crossing bit lines corresponds to the voltage Vsand data stored in the cells connected to this active word line are determined by detecting the charge values of the cells.
REFERENCES:
patent: 4873455 (1989-10-01), de Chambost et al.
patent: 5550770 (1996-08-01), Kuroda
patent: 6466473 (2002-10-01), Nair et al.
patent: 6522568 (2003-02-01), Nair
Proceedings of the IEEE, vol. 88, No. 5, May 2000, pp. 667-689, “Survey of Circuit Innovation in Ferroelectric Random-Access Memories” by A. Sheikholeslami et al.
Bröms Per
Karlsson Christer
Elms Richard
Hur J. H.
Thin Film Electronics ASA
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