Method for rapid thermal treatment using high energy...

Details Method for rapid thermal treatment using high energy... Method for rapid thermal treatment using high energy...

2011-08-02

2011-08-02

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C257SE21271, C257SE21282, C257SE21284, C257SE21301

Reexamination Certificate

active

07989363

ABSTRACT:
A method for fabricating semiconductor devices, e.g., SONOS cell. The method includes providing a semiconductor substrate (e.g., silicon wafer, silicon on insulator) having a surface region, which has a native oxide layer. The method includes treating the surface region to a wet cleaning process to remove a native oxide layer from the surface region. In a specific embodiment, the method includes subjecting the surface region to an oxygen bearing environment and subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 10 milli-seconds to increase a temperature of the surface region to greater than 1000 Degrees Celsius. In a specific embodiment, the method causes formation of an oxide layer having a thickness of less than 10 Angstroms. In a preferred embodiment, the oxide layer is substantially free from pinholes and other imperfections. In a specific embodiment, the oxide layer is a gate oxide layer.

REFERENCES:
patent: 6319759 (2001-11-01), Furukawa et al.
patent: 6573161 (2003-06-01), Miyasaka et al.
patent: 7118968 (2006-10-01), Hsieh
patent: 7271458 (2007-09-01), Chui et al.
patent: 7554161 (2009-06-01), Ahn et al.
patent: 7710765 (2010-05-01), Hanafi
patent: 2007/0087505 (2007-04-01), Thakur
patent: 2007/0212896 (2007-09-01), Olsen et al.
patent: 2008/0012065 (2008-01-01), Kumar
patent: 2008/0023732 (2008-01-01), Felch et al.
patent: 0196155 (1986-10-01), None

Affiliated with

Also associated with

Rating

Method for rapid thermal treatment using high energy... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for rapid thermal treatment using high energy..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for rapid thermal treatment using high energy... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2781604