Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1995-09-25
2000-06-20
Woodward, Michael P.
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
216 38, 216 58, 216 63, 216 67, 216 69, 216 70, 438105, 438706, 438710, 438720, 438735, 438964, H01L 21311
Patent
active
060777877
ABSTRACT:
A method for selective controlled etching of a material particularly by sequentially switching between two (2) or more modes of radiofrequency waves and/or by distance from a source of the microwaves. The modes and/or distance are selected depending upon the surface of the material to be etched. The etching is rapidly conducted at 0.5 mtorr to 10 torr, preferably using microwave plasma etching.
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Asmussen Jes
Chakraborty Rabindra N.
Goldman Paul D.
Reinhard Donnie K.
Board of Trustees operating Michigan State University
McLeod Ian C.
Saint-Gobain Norton Industrial Ceramics Corporation
Woodward Michael P.
Zeman Mary K
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