Method for quantifying safe operating area for bipolar...

Data processing: measuring – calibrating – or testing – Testing system – Of circuit

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S139000, C257S335000, C257S378000, C257S592000, C438S268000

Reexamination Certificate

active

06931345

ABSTRACT:
A method for quantifying safe operating regions within a safe operating area (SOA) for a bipolar junction transistor (BJT) by driving the device under test (DUT) as part of a current mirror circuit and monitoring variances in the current mirror ratio for various biasing conditions.

REFERENCES:
patent: 4823176 (1989-04-01), Baliga et al.
patent: 4941030 (1990-07-01), Majumdar
patent: 5557139 (1996-09-01), Palara
patent: 5909039 (1999-06-01), Bakowski et al.
patent: 6121089 (2000-09-01), Zeng et al.
patent: 6405148 (2002-06-01), Hayashi et al.
Michael G. Adlerstein, Thermal Stability of Emitter Ballasted HBT's, IEEE Transaction on Electron Devices, Aug. 1998, pp. 1653-1655, vol. 45, No. 8.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for quantifying safe operating area for bipolar... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for quantifying safe operating area for bipolar..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for quantifying safe operating area for bipolar... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3510006

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.