Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2008-06-04
2010-10-26
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S780000, C257SE21002, C257SE21240
Reexamination Certificate
active
07820556
ABSTRACT:
Acetylene is treated to remove some residual storage solvent that may be present with the acetylene in a source of acetylene such as a container. Such treatment may be performed prior to supplying the acetylene to a deposition chamber or other reactor where acetylene is a reactant. After treatment, the acetylene gas stream has a relatively constant concentration of storage solvent, regardless of how much acetylene has been released from the acetylene source. The treatment may involve condensing the storage solvent from the gas stream at a certain temperature and separating the storage solvent from the gas stream.
REFERENCES:
patent: 4668261 (1987-05-01), Chatzipetros et al.
patent: 4863493 (1989-09-01), Kotani et al.
patent: 4863760 (1989-09-01), Schantz et al.
patent: 5261250 (1993-11-01), Missimer
patent: 5378316 (1995-01-01), Franke et al.
patent: 5470661 (1995-11-01), Bailey et al.
patent: 6030591 (2000-02-01), Tom et al.
patent: 6066209 (2000-05-01), Sajoto et al.
patent: 6150719 (2000-11-01), Saia et al.
patent: 6241793 (2001-06-01), Lee et al.
patent: 6286321 (2001-09-01), Glater
patent: 6319299 (2001-11-01), Shih et al.
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6617553 (2003-09-01), Ho et al.
patent: 6967072 (2005-11-01), Latchford et al.
patent: 7223526 (2007-05-01), Fairbairn et al.
patent: 7314506 (2008-01-01), Vininski et al.
patent: 7323401 (2008-01-01), Ramaswamy et al.
patent: 7381644 (2008-06-01), Subramonium et al.
patent: 2001/0021491 (2001-09-01), Chen et al.
patent: 2002/0182848 (2002-12-01), Joseph et al.
patent: 2003/0044532 (2003-03-01), Lee et al.
patent: 2004/0016972 (2004-01-01), Singh et al.
patent: 2004/0018750 (2004-01-01), Sophie et al.
patent: 2004/0023502 (2004-02-01), Tzou et al.
patent: 2004/0140506 (2004-07-01), Singh et al.
patent: 2004/0180551 (2004-09-01), Biles et al.
patent: 2004/0266195 (2004-12-01), Dokumaci et al.
patent: 2005/0042889 (2005-02-01), Lee et al.
patent: 2005/0098119 (2005-05-01), Burger et al.
patent: 2005/0112506 (2005-05-01), Czech et al.
patent: 2006/0091559 (2006-05-01), Nguyen et al.
patent: 2006/0197881 (2006-09-01), Kang et al.
patent: 2007/0048674 (2007-03-01), Wells
patent: 2007/0059913 (2007-03-01), King et al.
patent: 2007/0125762 (2007-06-01), Cui et al.
patent: 2007/0128538 (2007-06-01), Fairbairn et al.
patent: 2007/0166546 (2007-07-01), Ichikawa et al.
patent: 2007/0166979 (2007-07-01), Wang et al.
patent: 2007/0247073 (2007-10-01), Paterson et al.
patent: 2008/0128907 (2008-06-01), Yang et al.
patent: 2008/0242912 (2008-10-01), Letessier et al.
patent: 2008/0254641 (2008-10-01), Kobayashi et al.
patent: 2009/0182180 (2009-07-01), Huang et al.
U.S. Office Action mailed Jan. 5, 2009, from U.S. Appl. No. 11/449,983.
U.S. Office Action mailed Jan. 5, 2009, from U.S. Appl. No. 11/710,377.
Henri, et al., Method for Improved Thickness Repeatability of PECVD Deposited Carbon Films, Novellus Systems, Inc., U.S. Appl. No. 12/334,220, filed Dec. 12, 2008.
U.S. Office Action mailed Dec. 14, 2006, from U.S. Appl. No. 11/318,269.
Ikeda et al., “Top-PECVD”: A New Conformal Plasma Enhanced CVD Technology using TEOS, Ozone and Pulse-modulated RF Plasma, 1992 IEEE, pp. 11.2.1-11.2.4.
Subramonium et al., “Methods of Depositing Highly Selective Transparent Ashable Hardmask Films”, U.S. Appl. No. 11/449,983, filed Jun. 8, 2006.
Subramonium et al., “Methods of Depositing Stable and Hermetic Ashable Hardmask Films,” Novellus Systems, Inc., U.S. Appl. No. 11/710,377, filed Feb. 22, 2007, pp. 1-26.
Notice of Allowance and Fee Due mailed May 7, 2007 from U.S. Appl. No. 11/318,269.
Allowed Claims from U.S. Appl. No. 11/318,269.
Fang et al., “Methods of Improving Ashable Hardmask Adhesion to Metal layers,” Novellus Systems, Inc., U.S. Appl. No. 11/612,382, filed Dec. 18, 2006.
U.S. Office Action mailed Oct. 9, 2007, from U.S. Appl. No. 11/612,382.
Grill, et al. “Diamondlike carbon films by rf plasma-assisted chemical vapor deposition from acetylene,” IBM J. Res. Develop., vol. 34, No. 6, Nov. 1990, pp. 849-857.
Callegari et al., “Optical properties of hydrogenated amorphous-carbon film for attenuated phase-shift mask applications,” J.Vac. Sci. Technol. B 11(6), Nov./Dec. 1993, pp. 2697-2699.
Grill, A., “Diamond-like carbon: state of the art,” Diamond and Related Mateials 8 (1999) 428-434.
Grill, A., “Plasma-deposited diamondlike carbon and related materials,” IBM Journal of Research and Development, vol. 43, ½, 1999, http://research.ibm.com/journal/rd/431/grill.html. 14 pages.
Kragler et al., “Scanning tunneling microscopy based lithography employing amorphous hydrogenated carbon as a high resolution resist mask,” Appl. Phys. Lett. 67 (8), Aug. 21, 1995, pp. 1163-1165.
U.S. Office Action mailed Dec. 27, 2007, from U.S. Appl. No. 11/449,983.
Subramonium et al., “Pulsed PECVD Method for Modulating Hydrogen Content in Hard Mask,” Novellus Systems, Inc., U.S. Appl. No. 12/048,967, filed Mar. 14, 2008.
Subramonium et al., “Methods and Apparatus for Plasma-Based Deposition,” Novellus Systems, Inc., U.S. Appl. No. 11/849,208, filed Aug. 31, 2007.
U.S. Office Action mailed Jul. 9, 2008, from U.S. Appl. No. 11/449,983.
U.S. Final Office Action mailed May 13, 2008, from U.S. Appl. No. 11/612,382.
U.S. Office Action mailed Aug. 19, 2008, from U.S. Appl. No. 11/612,382.
Subramonium et al., “Methods of Depositing Smooth and Conformal Ashable Hard Mask Films,” Novellus Systems, Inc., U.S. Appl. No. 12/163,670, filed Jun. 27, 2008.
Holmes, et al., “Trimethylsilylacetylene,” Organic Syntheses, Coll. vol. 8, p. 606 (1993); vol. 65, p. 61 (1987).
Voronkin et al., “Structure and mechanical properties of a-C:H films deposited onto polymer substrates,” Diamond and Related Materials, 4 (1994) 5-9.
U.S. Appl. No. 11/612,382, Office Action mailed Feb. 24, 2009.
U.S. Appl. No. 11/612,382, Office Action mailed May 12, 2009.
U.S. Appl. No. 11/710,377, Office Action mailed Aug. 19, 2009.
U.S. Appl. No. 11/449,983, Office Action mailed Sep. 15, 2009.
U.S. Appl. No. 11/710,652, Office Action mailed Nov. 20, 2009.
U.S. Appl. No. 11/612,382, Office Action mailed Dec. 9, 2009.
Hsu Gishun
Merrill Charles
Stoddard Scott
Fan Michele
Novellus Systems Inc.
Smith Matthew
Weaver Austin Villeneuve & Sampson LLP
LandOfFree
Method for purifying acetylene gas for use in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for purifying acetylene gas for use in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for purifying acetylene gas for use in semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4198046