Method for purging a multi-layer sacrificial etched silicon subs

Details Method for purging a multi-layer sacrificial etched silicon subs Method for purging a multi-layer sacrificial etched silicon subs

1997-04-08

1998-11-24

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 91, 156345, 438747, H01L 2100

Patent

active

058401997

ABSTRACT:
An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate through a variety of a etching and bonding processes is disclosed. The processes entail ion implantation and formation of an oxide support layer below the proofmass, integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates, and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material wherein the hinge is structurally mounted to the substrates. In a bond and etch back process, the wafer is processed, sawed in half, and then bonded together again wherein the complementary halves are joined to obtain the finished accelerometer. As part of the bond and etch-back process, an anchor for bridging the silicon substrate to an oxide support substrate includes using a selective epitaxy or non-selective epitaxy process to grow the polysilicon anchors.

REFERENCES:
patent: 4021278 (1977-05-01), Hood et al.
patent: 4557785 (1985-12-01), Ohkuma
patent: 5447601 (1995-09-01), Norris

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