Method for pulling single crystals

Details Method for pulling single crystals Method for pulling single crystals

1994-05-25

1995-10-31

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 19, 117 20, 117217, C30B 1520

Patent

active

054620112

ABSTRACT:
A method and apparatus for pulling single crystals from a melt of semicontor material, in which a monocrystalline seed crystal grows to form a single crystal, the seed crystal being dipped into the melt and raised in a controlled manner in the vertical direction with respect to the melt, while the melt forms a molten pool which is held on a support body only by the surface tension and by electromagnetic forces due to an induction coil. This method includes recharging the melt with semiconductor material in solid or liquid form during the growth of the single crystal.

REFERENCES:
patent: 2961305 (1960-11-01), Dash
patent: 3607139 (1971-09-01), Hanks
patent: 3936346 (1976-02-01), Lloyd
patent: 4366024 (1982-12-01), Ast et al.
patent: 4659421 (1987-04-01), Jewett
patent: 5030315 (1991-07-01), Washizuka et al.

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