Method for pulling a silicon single crystal by imposing a period

Details Method for pulling a silicon single crystal by imposing a period Method for pulling a silicon single crystal by imposing a period

1991-12-24

1993-06-01

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566204, C30B 1526

Patent

active

052156206

ABSTRACT:
This is a new method for pulling a silicon single crystal. When the silicon single crystal is pulled from a quartz crucible which is provided with a rotation rate more than zero, exclusive of zero rpm according to the Czochralski process, a reference rotation rate of the quartz crucible is controlled by a predetermined program. This method is characterized in that a pulse-like increase or decrease in a rotation rate is superimposed to the reference rotation rate and differences in and cycles of the rotation rate are set by the predetermined program.

REFERENCES:
patent: 2889240 (1959-06-01), Rosi
patent: 3342560 (1967-09-01), Starnberg et al.
patent: 3493770 (1970-02-01), Dessauer et al.
patent: 3929577 (1975-12-01), Goodrum
patent: 4239585 (1980-12-01), Kohl
patent: 4551196 (1985-11-01), Capper et al.
Krumbhaar et al., "Controlled Crystal Pulling with Accelerated Crucible Rotation" IBM T.D.B. pp. 903-904 vol. 17 No. 3, Aug. 1974.
Journal of Crystal Growth, vol. 49, No. 2, Jun. 1980, pp. 291-296 P. Scheel et al. "Crystal Pulling Using ACRT".

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