Method for providing whisker-free aluminum metal lines or...

Details Method for providing whisker-free aluminum metal lines or... Method for providing whisker-free aluminum metal lines or...

2007-01-02

2007-01-02

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S720000, C438S750000, C134S001200, C134S001300

Reexamination Certificate

active

10868309

ABSTRACT:
A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

REFERENCES:
patent: 4899206 (1990-02-01), Sakurai et al.
patent: 5866444 (1999-02-01), Yamazaki et al.
patent: 6433842 (2002-08-01), Kaneko et al.
patent: 6501094 (2002-12-01), Yamazaki et al.
patent: 57-183053 (1982-11-01), None
patent: 61-127149 (1986-06-01), None
patent: 02-143425 (1990-06-01), None
L. Succo et al.: “Influence of target microstructure on the propensity for whisker growth in sputter-deposited aluminum alloy fims”,J. Vac. Sci. Technol., vol. A7, No. 3, May/Jun. 1989, pp. 814-816.

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