Method for providing polysilicon thin films of improved uniformi

Details Method for providing polysilicon thin films of improved uniformi Method for providing polysilicon thin films of improved uniformi

1982-10-19

1984-08-21

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 357 91, 427 531, H01L 21265, B23K 2700

Patent

active

044661797

ABSTRACT:
A method for forming a polysilicon thin film semiconductor device precursor, and the precursor, are disclosed, wherein the deposited thin film layer is scanned with a continuous wave laser in a first direction, and scanned a second time in a direction different from that of the first direction. The cross-scanning reduces the anisotropy of the thin film produced by the first scanning and apparently induces larger grain size in the recrystallized polysilicon.

REFERENCES:
patent: 4059461 (1977-11-01), Fan et al.
patent: 4187126 (1980-02-01), Radd et al.
patent: 4315130 (1982-02-01), Inagaki et al.
patent: 4372989 (1983-02-01), Menzel
patent: 4375993 (1983-03-01), Mori et al.
Lam et al., J. Electrochem. Soc., 128, (1981), 1981.
Stutz et al., Appl. Phys. Letts., 39, (1981), 498.
Applied Physics Letter, vol. 33, No. 8, Oct. 15, 1978, pp. 775-778.

Affiliated with

Also associated with

Rating

Method for providing polysilicon thin films of improved uniformi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for providing polysilicon thin films of improved uniformi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for providing polysilicon thin films of improved uniformi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1936146