Method of manufacturing punch through voltage regulator diodes u

Details Method of manufacturing punch through voltage regulator diodes u Method of manufacturing punch through voltage regulator diodes u

1981-06-25

1984-08-21

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576W, 29578, 148 15, 148175, 148187, 148190, 156643, 156648, 156653, 357 20, 357 35, 357 45, 357 49, H01L 2122, H01L 2176

Patent

active

044661800

ABSTRACT:
The invention is a punch through voltage regulator having an active region formed on a substrate by any one of four different methods. Each method includes recessing the substrate substantially along the periphery of the regulator active region, selectively doping the regulator active region through portions of the recess, filling the recesses with substrate oxide to isolate the active region from the substrate and forming conductors to selectively doped portions of the active region to serve as electrode connections. For P doped substrates N type doping is introduced via the recesses and in a second method the recesses are deepened and P type doping is introduced into the substrate to change the doping in the active region. For N doped substrates P type doping is introduced via the recesses and when the recesses are deepened in the fourth method, N type doping is introduced into the substrate to change the doping of the active portion.

REFERENCES:
patent: 3919005 (1975-11-01), Schinella et al.
patent: 4109272 (1978-08-01), Herbst et al.
patent: 4110122 (1978-08-01), Kaplow et al.
patent: 4131910 (1978-12-01), Hartman et al.
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4323913 (1982-04-01), Murrmann et al.
Berndlmaier et al., "Lateral PNP Transistor with Minimum Basewidth" I.B.M. Tech. Discl. Bull., vol. 22, No. 10, Mar. 1980, p. 4543.

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