Method for providing low cost wafers for use as substrates for i

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156603, 156613, 156614, 156DIG64, 427 86, 427 38, H01L 21203, H01L 21205

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041475844

ABSTRACT:
The method of manufacture of the present invention provides a wafer that is better than a bulk monocrystalline silicon wafer and equivalent to silicon on sapphire (SOS) wafers for use as substrates for integrated circuits. The method comprises taking an inexpensive slab of silicon having <111> crystal orientation and by low pressure CVD, high pressure CVD, or plasma deposition techniques depositing a polycrystalline layer of sapphire on the <111> silicon base. The polycrystalline layer of sapphire is then annealed at an elevated temperature to form a monocrystalline layer having a <1101> orientation. A single crystalline layer of silicon having <111> crystal orientation is then epitaxially grown on the sapphire. The resultant multilayer wafer is equivalent in function and reliability to a silicon on sapphire wafer without the commensurate cost.

REFERENCES:
patent: 3476617 (1969-11-01), Robinson
patent: 3655439 (1972-04-01), Seiter
patent: 3796597 (1974-03-01), Porter et al.
Allison et al., Proc. of IEEE, vol. 57, No. 9, "Thin Film Si ... Applications", pp. 1490-1498 (1969).
D. J. Dunn, J. of Appl. Phys., "Elect. Prop. Si Films ... On Sapphire", vol. 38, No. 4 (1967), pp. 1909-1914.
Ajmera, J. Electrochemical Soc., Eff. ... on Silicon, Oct. 1972, pp. 1421-1424.

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