Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1977-12-27
1979-04-03
Esposito, Michael F.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156603, 156613, 156614, 156DIG64, 427 86, 427 38, H01L 21203, H01L 21205
Patent
active
041475844
ABSTRACT:
The method of manufacture of the present invention provides a wafer that is better than a bulk monocrystalline silicon wafer and equivalent to silicon on sapphire (SOS) wafers for use as substrates for integrated circuits. The method comprises taking an inexpensive slab of silicon having <111> crystal orientation and by low pressure CVD, high pressure CVD, or plasma deposition techniques depositing a polycrystalline layer of sapphire on the <111> silicon base. The polycrystalline layer of sapphire is then annealed at an elevated temperature to form a monocrystalline layer having a <1101> orientation. A single crystalline layer of silicon having <111> crystal orientation is then epitaxially grown on the sapphire. The resultant multilayer wafer is equivalent in function and reliability to a silicon on sapphire wafer without the commensurate cost.
REFERENCES:
patent: 3476617 (1969-11-01), Robinson
patent: 3655439 (1972-04-01), Seiter
patent: 3796597 (1974-03-01), Porter et al.
Allison et al., Proc. of IEEE, vol. 57, No. 9, "Thin Film Si ... Applications", pp. 1490-1498 (1969).
D. J. Dunn, J. of Appl. Phys., "Elect. Prop. Si Films ... On Sapphire", vol. 38, No. 4 (1967), pp. 1909-1914.
Ajmera, J. Electrochemical Soc., Eff. ... on Silicon, Oct. 1972, pp. 1421-1424.
Dixit Anant D.
Garrison Lilburn H.
Burroughs Corporation
Esposito Michael F.
Peterson Kevin R.
Young Mervyn L.
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