Method for providing electrically fusible links in copper interc

Details Method for providing electrically fusible links in copper interc Method for providing electrically fusible links in copper interc

1998-04-21

2000-03-07

Chang, Joni

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

H01L 2182

Patent

active

06033939&

ABSTRACT:
A method is provided for the fabrication of fuses within a semiconductor IC structure, which fuses are delectable by a laser pulse or a low voltage electrical pulse typically below 3.5 V to reroute the electrical circuitry of the structure to remove a faulty element. The fuses are formed on the surface of circuitry which is coplanar with a surrounding dielectric such as the circuitry formed by a Damascene method. A preferred fuse material is silicon-chrome-oxygen and the preferred circuitry is copper.

REFERENCES:
patent: 3619725 (1971-11-01), Soden
patent: 4740485 (1988-04-01), Sharpe-Geisler
patent: 5070392 (1991-12-01), Coffey et al.
patent: 5185291 (1993-02-01), Fischer et al.
patent: 5340775 (1994-08-01), Carruthers et al.
patent: 5472901 (1995-12-01), Kapoor
patent: 5622892 (1997-04-01), Bezama et al.

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