Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1992-08-14
1994-03-15
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
365190, 365203, 365205, 365207, 365208, G11C 700
Patent
active
052951006
ABSTRACT:
There is a DRAM which provides for a faster non-accessed memory cell ones voltage level refresh or restore process. Specifically, the DRAM does not shut down a digit line's voltage pull-up circuitry (PSA) during a write operation. By leaving on the PSA, the digit lines being pulled to a ones voltage level will continue to be pulled up during the write operation. Thus, digit line will reach the ones voltage level in a shorter time than if the PSA were turned off during the write operation.
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Casper Stephen L.
Starkweather Michael W.
LaRoche Eugene R.
Mai Son
Micron Semiconductor Inc.
Starkweather Michael W.
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