Method for protecting chip corners in wet chemical etching of wa

Details Method for protecting chip corners in wet chemical etching of wa Method for protecting chip corners in wet chemical etching of wa

1992-07-24

1994-02-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156654, 1566591, 1566611, 156662, 156345, H01L 21306, B44C 122

Patent

active

052863433

ABSTRACT:
The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

REFERENCES:
patent: 3728179 (1973-04-01), Davidson et al.
patent: 4172005 (1979-10-01), Muraoka et al.
"Corner Compensation Techniques In Anisotropic Etching of (100)-Silicon Using Aqueous KOH" by H. Sandmaier et al., Intl Conf . . . Actuator 1991, pp. 456-459.
"Compensation Corner Undercutting In Anisotropic Etching of (100) Silicon" by Wu et al., Sensors and Actuators 18:207-215 (1989).
"Fabrication of Non-Underetched Convex Corners In Anisotropic Etching of (100)-Silicon In Aqueous KOH With Respect to Novel Micromechanical Elements" by Mayer et al., J. Electrochem, Soc. 137:3947-3951 (1990).
"Mesa Structure Formation Using Potassium Hydroxide and Ethylene Diamine Based Etchants" by Chang et al., IEEE Workshop 1988, pp. 102-103.
"A Study On Deep Etching Of Silicon Using EPW", by Wu et al., Int'l Conference On Solid-State Sensors & Actuators, 1985 pp. 291-294.
"Corner Compensation Structures For (110) Oriented Silicon" by D. R. Ciarlo, IEEE Proceedings of Micro Robots & Teleoperators Workshop, 1987.
"Silicon As A Mechanical Material" by Kurt Peterson, Proceedings Of the IEEE 70:420-457 (May 1982).

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