Method for programming and erasing an array of NMOS EEPROM...

Details Method for programming and erasing an array of NMOS EEPROM... Method for programming and erasing an array of NMOS EEPROM...

2006-06-01

2008-12-16

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C257S315000

Reexamination Certificate

active

07466591

ABSTRACT:
A method for programming and erasing an array of NMOS electrically erasable programmable read only memory (EEPROM) cells that minimizes bit disturbances and high voltage requirements for the memory array cells and supporting circuits. In addition, the array of N-channel memory cells may be separated into independently programmable memory segments by creating multiple, electrically isolated P-wells upon which the memory segments are fabricated. The multiple, electrically isolated P-wells may be created, for example, by p-n junction isolation or dielectric isolation.

REFERENCES:
patent: 5235544 (1993-08-01), Caywood
patent: 5790455 (1998-08-01), Caywood
patent: 5956271 (1999-09-01), Kaya
patent: 5986931 (1999-11-01), Caywood
patent: 6201732 (2001-03-01), Caywood
patent: 6222761 (2001-04-01), Gerber et al.
patent: 6236595 (2001-05-01), Gerber et al.
patent: 6300183 (2001-10-01), Gerber et al.
patent: 6504191 (2003-01-01), Gerber et al.
patent: 7075140 (2006-07-01), Spadea
patent: 2005/0110073 (2005-05-01), Spadea
International Search Report and Written Opinion for PCT/US2007/069726 mailed Feb. 20, 2008.

Affiliated with

Also associated with

Rating

Method for programming and erasing an array of NMOS EEPROM... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for programming and erasing an array of NMOS EEPROM..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for programming and erasing an array of NMOS EEPROM... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4051679