Method for programming a multilevel phase change memory device

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S100000, C365S148000

Reexamination Certificate

active

07656701

ABSTRACT:
A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at least a portion of this material above a melting energy level. A portion of the energy applied to the phase change material is allowed to dissipate below the melting energy level. The shape of the energy dissipation from the phase change material is controlled until the energy applied to the phase change material is less than a quenched energy level, to cause the phase change device to have the desired Vth. A remaining portion of the energy applied to the phase change material is allowed to dissipate to an environmental level.

REFERENCES:
patent: 4744055 (1988-05-01), Hennessey
patent: 6545903 (2003-04-01), Wu
patent: 6816404 (2004-11-01), Khouri et al.
patent: 6985389 (2006-01-01), Ma
patent: 7123535 (2006-10-01), Kurotsuchi et al.
patent: 7335907 (2008-02-01), Terao et al.
patent: 2003/0185047 (2003-10-01), Khouri et al.

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