Method for programming a multilevel phase change memory device

Details Method for programming a multilevel phase change memory device Method for programming a multilevel phase change memory device

2007-08-21

2010-02-02

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S100000, C365S148000

Reexamination Certificate

active

07656701

ABSTRACT:
A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at least a portion of this material above a melting energy level. A portion of the energy applied to the phase change material is allowed to dissipate below the melting energy level. The shape of the energy dissipation from the phase change material is controlled until the energy applied to the phase change material is less than a quenched energy level, to cause the phase change device to have the desired Vth. A remaining portion of the energy applied to the phase change material is allowed to dissipate to an environmental level.

REFERENCES:
patent: 4744055 (1988-05-01), Hennessey
patent: 6545903 (2003-04-01), Wu
patent: 6816404 (2004-11-01), Khouri et al.
patent: 6985389 (2006-01-01), Ma
patent: 7123535 (2006-10-01), Kurotsuchi et al.
patent: 7335907 (2008-02-01), Terao et al.
patent: 2003/0185047 (2003-10-01), Khouri et al.

Affiliated with

Also associated with

Rating

Method for programming a multilevel phase change memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for programming a multilevel phase change memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for programming a multilevel phase change memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4219618