Method for programming a multilevel phase change memory device

Details Method for programming a multilevel phase change memory device Method for programming a multilevel phase change memory device

2007-09-18

2007-09-18

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S100000, C365S148000

Reexamination Certificate

active

10976648

ABSTRACT:
A method of programming a phase change device includes selecting a desired threshold voltage (Vth) and applying a programming pulse to a phase change material in the phase change device. The applying of the programming pulse includes applying a quantity of energy to the phase change material to drive at least a portion of this material above a melting energy level. A portion of the energy applied to the phase change material is allowed to dissipate below the melting energy level. The shape of the energy dissipation from the phase change material is controlled until the energy applied to the phase change material is less than a quenched energy level, to cause the phase change device to have the desired Vth. A remaining portion of the energy applied to the phase change material is allowed to dissipate to an environmental level.

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S. Lai and T. Lowrey, “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications,”IEDM Dig. (2001), pp. 803-806.

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