Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-06-20
2000-07-18
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438646, 438650, 438687, H01L 214763
Patent
active
060907010
ABSTRACT:
A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches.
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Hasunuma Masahiko
Hayasaka Nobuo
Ito Sachiyo
Kajita Akihiro
Kaneko Hisashi
Kabushiki Kaisha Toshiba
Quach T. N.
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