Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1998-02-18
2000-09-19
Fourson, George
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438427, 438435, 438692, H01L 21762
Patent
active
061211133
ABSTRACT:
A method for the production of a semiconductor device comprises the steps of forming a stopper layer on a semiconducting substrate, forming a first opening part in the stopper layer thereby enabling the first opening part to establish an element separating area, etching the semiconducting substrate through the first opening part thereby forming a trench in the semiconducting substrate, partially etching the part of the stopper layer approximating closely to the trench thereby dilating the width of the first opening part, forming an oxide film on the stopper layer, in the first opening part, and inside the trench, removing the part of the oxide film rising above the stopper layer, removing the stopper layer, and contracting the lateral parts of the oxide film protruding from the trench.
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Ohta Hiroyuki
Takatsuka Hirotaka
Fourson George
Fujitsu Limited
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