Method for production of deep p regions in silicon, and...

Details Method for production of deep p regions in silicon, and... Method for production of deep p regions in silicon, and...

2007-03-27

2007-03-27

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S510000

Reexamination Certificate

active

11023039

ABSTRACT:
The invention relates to a method for production of deep p regions in silicon, with the method having the following step: bombardment of an n substrate section, an n epitaxial section or an exposed weakly doped n region of a semiconductor component that is to be produced with high-energy particles, whose energy is chosen such that the previous n region is redoped to form a p region to the desired depth after a specific healing time at a specific healing temperature after the bombardment, and to its use for the production of semiconductor components, for example in order to carry out isolating diffusion.

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Bisello et al., “Radiation Damage of Standard and Oxygenated Silicon Diodes Irradiated by 16-MeV and 27-MeV Protons”, IEEE Trans. on Nuclear Science vol. 48, No. 4, Aug. 2001, pp. 1020-1027, (8 pages).

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