Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-22
2006-08-22
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S128000, C438S618000, C438S652000, C438S669000
Reexamination Certificate
active
07094674
ABSTRACT:
The invention relates to a method for production of contacts on a wafer, preferably with the aid of a lithographic process. The preferred embodiment provides a method which overcomes the disadvantages of the complex point/hole lithography process, and which avoids any increase in the process complexity. This method is achieved in that a strip structure extending over two layers is used to structure the contacts. The strip structure in the first layer is rotated at a predetermined angle with respect to the strip structure in the second layer, and the contacts are formed in the mutually overlapping areas of the strip structures in the two layers.
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Graf Werner
Haffner Henning
Heineck Lars
Kowalewski Johannes
Duong Khanh
Infineon - Technologies AG
Slater & Matsil L.L.P.
Smith Zandra V.
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