Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2009-04-29
2011-10-25
Chen, Bret (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S579000, C427S255370
Reexamination Certificate
active
08043668
ABSTRACT:
Provided is a method for depositing a fluorine-doped silicon oxide film on the surface of a substrate made of a material comprising at least 50 mass % of an ethylene/tetrafluoroethylene copolymer. This method comprises flowing a mixed gas into between electrodes, exposing the mixed gas to electric power applied between the electrodes so that the electrical power density between the electrodes becomes from 0.5 to 1.1 W/cm3to cause discharge, and forming plasma of the mixed gas and depositing the fluorine-doped silicon oxide film on the surface of the substrate. In this method, the mixed gas for forming the fluorine-doped silicon oxide film comprises silicon tetrafluoride, oxygen and a hydrocarbon, the atomic ratio of oxygen atoms to carbon atoms (O/C) is from 1 to 10, and the atomic ratio of oxygen atoms to silicon atoms (O/Si) is from 1.7 to 25 in the mixed gas.
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Higashi Seiji
Tamitsuji Chikaya
Asahi Glass Company Limited
Chen Bret
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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