Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-05-02
2006-05-02
Alanko, Anita (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S056000, C216S099000, C438S053000, C438S753000, C438S795000
Reexamination Certificate
active
07037438
ABSTRACT:
A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.
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Artmann Hans
Benzel Hubert
Schaefer Frank
Weber Heribert
Alanko Anita
Kenyon & Kenyon
Robert & Bosch GmbH
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